Structure,optical spectroscopy and dispersion parameters of ZnGa2Se4 thin films at different annealing temperatures |
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| Authors: | M Fadel IS Yahia GB Sakr F Yakuphanoglu SS Shenouda |
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| Institution: | 1. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;2. Nano-Science Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;3. Physics Department, Faculty of Science, Firat University, 23119, Elaz??, Turkey;1. Department of Electrical and Electronics Engineering, Faculty of Technology, Firat University, Elazig, Turkey;2. Maden Higher Vocational School, Firat University, Elaz??, Turkey;3. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia;4. Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey;1. Institute of Problems in Mechanical Engineering, Bolshoy 61, V.O., Saint Petersburg 199178, Russia;2. St. Petersburg State Polytechnical University, Polytechnicheskaya St., 29, Saint Petersburg 195251, Russia;1. School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, PR China;2. Jiangxi Engineering Laboratory for Optoelectronics Testing Technology, Nanchang Hangkong University, Nanchang 330063, PR China;3. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia;4. College of Electronic Engineering, Heilongjiang University, Harbin 150080, PR China;5. Department of Physics, Harbin Institute of Technology, Harbin 150001, PR China;1. Defence Metallurgical Research Laboratory, Hyderabad 500058, India;2. Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India;1. G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences, 49 Tropinin Str., 603951, Nizhny Novgorod, Russia;2. N.I. Lobachevski Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia;1. Department of Chemistry, Faculty of Sciences of the Matter, Ibn Khaldoun University of Tiaret, BP P 78 Zaaroura, Tiaret, Algeria;2. Department of Physics, Hitit University, 19030 Çorum, Turkey;3. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;4. Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan |
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| Abstract: | Thin films of ZnGa2Se4 were deposited by thermal evaporation method of pre-synthesized ingot material onto highly cleaned microscopic glass substrates. The chemical composition of the investigated compound thin film form was determined by means of energy-dispersive X-ray spectroscopy. X-ray diffraction XRD analysis revealed that the powder compound is polycrystalline and the as-deposited and the annealed films at Ta = 623 and 673 K have amorphous phase, while that annealed at Ta = 700 K is polycrystalline with a single phase of a defective chalcopyrite structure similar to that of the synthesized material. The unit-cell lattice parameters were determined and compared with the reported data. Also, the crystallite size L, the dislocation density δ and the main internal strain ε were calculated. Analyses of the AFM images confirm the nanostructure of the prepared annealed film at 700 K. The refractive index n and the film thickness d were determined from optical transmittance data using Swanepoel's method. It was found that the refractive index dispersion data obeys the single oscillator model from which the dispersion parameters were determined. The electric susceptibility of free carriers and the carrier concentration to the effective mass ratio were determined according to the model of Spitzer and Fan. The analysis of the optical absorption revealed both the indirect and direct energy gaps. The indirect optical gaps are presented in the amorphous films (as-deposited, annealed at 623 and 673 K), while the direct energy gap characterized the polycrystalline film at 700 K. Graphical representations of ε1, ε2, tan δ, ? Im1/ε*] and ? Im(1/ε* + 1)] are also presented. ZnGa2Se4 is a good candidate for optoelectronic and solar cell devices. |
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