Influence of built-in electric filed on the energy and emergence angle spreads of transmission-mode GaAs photocathode |
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| Authors: | Ling Ren Benkang Chang Honggang Wang |
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| Institution: | 1. Department of Mechanical Engineering, Bandar Anzali Branch, Islamic Azad University, Bandar Anzali, Iran;2. Department of Mechanical and Aerospace Engineering, Ramsar Branch, Islamic Azad University, Ramsar, Iran;1. Department of Applied Physics, Visvesvaraya National Institute of Technology, Nagpur 440010, India;2. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300, South Africa;1. Istituto Nazionale di Fisica Nucleare – Sezione di Napoli, Complesso di Monte S. Angelo Edificio 6, via Cintia 80126 Napoli, Italy;2. Università degli Studi di Napoli “Federico II”, Dipartimento di Fisica, via Cintia 80126 Napoli, Italy;1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Science, Hubei University, Wuhan, Hubei 430062, China;2. Department of Energy Technology, Royal Institute of Technology, Stockholm, SE-10044, Sweden;3. Key Laboratory of Applied Chemistry, Department of Environmental and Chemical, Engineering, Yanshan University, No. 438 Hebei Street, Qinhuangdao 066004, Hebei Province, China |
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| Abstract: | In order to research the transport characteristic of photoelectrons in different-structure transmission-mode GaAs photocathodes, the energy and emergence angle spreads of photoelectrons reaching the band-bending region are calculated and the photoemission properties are analyzed. Based on the established atomic configuration models and ionized impurity scattering formulas of the uniform-doping and exponential-doping photocathodes, the trajectories of photoelectrons in different GaAs photocathodes have been calculated. The results show that, the emergence angle spread of the exponential-doping photocathode is more centralized than that of the uniform-doping one. The influence of the built-in electric field on the photoemission is obvious in the short-wave region. The built-in electric field not only increases the quantum efficient, but also improves the resolution of photocathode. This research can be propitious to investigate the photoemission mechanism, and to analyze the effect of the excited photoelectrons on the image intensifier performance. |
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