| 中规模CMOS电路的电离辐射效应 |
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| 引用本文： | 任迪远,米拉提汗,张玲珊,陆妩,严荣良.中规模CMOS电路的电离辐射效应[J].微电子学,1988(6). |
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| 作者姓名： | 任迪远 米拉提汗 张玲珊 陆妩 严荣良 |
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| 作者单位： | 中国科学院新疆物理所
(任迪远，米拉提汗，张玲珊，陆妩)，中国科学院新疆物理所(严荣良) |
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| 基金项目： | 国家自然科学基金，国防科工委的部分资助 |
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| 摘 要： | 本文报道了国产中规模体硅CMOS电路在~(60)Coγ射线和1.5MeV电子辐照下的总剂量效应的研究结果。试验表明,器件的软失效(参数退化达到某一损伤阈值)通常在400Gy(Si),而逻辑功能的失效则发生在1000Gy(Si)以后。同时,器件的软失效与辐照偏置条件没有明显的依赖关系,但软失效的参数却依赖于偏置条件及各厂家MOS工艺的差异。
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| 关 键 词： | CMOS集成电路 电子辐照 ~(60)Co γ辐照 总剂量辐射效应 |
Effects of Ionizing Radiation on MSI CMOS Integrated Circuits |
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| Ren Diyuan,Mellathan,Zhang Lingshan,Lu Wu and Yan Rongliang.Effects of Ionizing Radiation on MSI CMOS Integrated Circuits[J].Microelectronics,1988(6). |
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| Authors: | Ren Diyuan Mellathan Zhang Lingshan Lu Wu and Yan Rongliang |
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| Abstract: | Tests of total dose effects have been performed on the China-manufactured bulk Si MSI CMOS ICs irradiated by Co60 gamma-ray and 1.5MeV electron.It has shown that the soft failure of these devices usually occured at 400Gy (Si), which is nearly independent of the bias voltage during irradiation,and the logic function fails above 1000Gy(Si). Some parameters of the soft failure, however,is dependent upon the bias voltage during irradiation and different manufacturing technologies. |
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| Keywords: | CMOS IC Electron irradiation Co~(60) gamma-ray irradiation Total dose radiation effect |
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