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Energy levels in quasi uni-dimensional semiconductor heterostructures
Affiliation:1. LGRN – Laboratoire de Géodynamique et de Ressources Naturelles, Université Sidi Mohammed Ben Abdellah, Faculté des Sciences – Dhar El Mehraz – Fès, Morocco;2. LNEG – Laboratório Nacional de Energia e Geologia, 2720-866 Amadora, Portugal;3. IDL – Instituto Dom Luiz, Universidade de Lisboa, 1749-016 Lisboa, Portugal;1. Center for the Innovation and Application of Science and Technology, Universidad Autónoma de San Luis Potosí, Av. Sierra Leona # 550, Col. Lomas 2a Sección, C.P. 78210 San Luis Potosí, Mexico;2. Graduate School of Science and Engineering, Ehime University, Bunkyo-cho 3, Matsuyama, Ehime 790-8577, Japan;3. Instituto de Investigación en Comunicación Óptica, Universidad Autonóma de San Luis Potosí, Av. Karakorum 1470, Lomas 4a Secc., San Luis Potosí, SLP 78210, Mexico;1. School of Physics, Northeast Normal University, Changchun 130024, China;2. Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan;3. Department of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea;4. Center for Opto-Electronics Convergence Systems, KIST, Seoul 136-791, Republic of Korea;1. Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, 24, rue Lhomond, 75231 Paris Cedex 05, France;2. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
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