Exciton linewidth due to scattering from free carriers in semiconducting quantum well structures |
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Affiliation: | 1. Science School, Xi''an University of Technology, Xi''an 710048, PR China;2. School of Automation and Information Engineering, Xi''an University of Technology, Xi''an 710048, PR China;1. Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu Province, China;2. School of Materials Science and Engineering, Beihang University, Beijing, 100191, China;3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China;4. Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China;5. School of Electronic & Information Engineering, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu Province, China;6. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China;1. Department of Physics, Hazara University, Mansehra, 21300, Pakistan;2. New Technologies Research Centre, University of West Bohemia, Univerzitní 2732, 306 14 Pilsen, Czech Republic;1. Jiangxi Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China;2. Material Technology Institute, Yibin University, Yibin 644000, China;3. State Key Laboratory of Hydroscience and Engineering, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China |
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Abstract: | The contribution to the exciton linewidth in semiconducting quantum well structures due to the scattering of excitons by free carriers is calculated. It is found that this contribution becomes very important in limiting the exciton linewidth when a high density of free carriers is present or at low temperatures where the scattering of the excitons by optical and acoustic phonons is reduced. This contribution to the linewidth in quantum well structures is found to increase with the free carrier concentration and to extremely broaden and exciton peak at high carrier concentrations. At lower carrier concentrations, where the carriers behave as a nondegenerate gas of particles, the contribution to the exciton linewidth due to scattering by free carriers increases with temperature. |
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