Structure of heteroepitaxial GaAs on Si |
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| Affiliation: | 1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;2. Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, China;2. College of Physics and Energy, Shenzhen University, Shenzhen 518060, China;3. CAEP Software Center for High Performance Numerical Simulation, Institute of Applied Physics and Computational Mathematics, Beijing 100088, China;4. Center of Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China |
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| Abstract: | The current interest in GaAs grown on nonpolar substrates such as Si has been stimulated by the potential technological advantages of this system. Although the two major obstacles impeding the progress of heteroepitaxial growth of GaAs on Si (100) substrates, the large lattice mismatch and the formation of antiphase boundaries, have recently been overcome, the understanding of the microstructural growth process is still not satisfactory. We are presenting new x-ray scattering results which indicate that thin GaAs films are compressed in the film plane at room temperature, while thicker films are under tensil stress, the cross-over region being at about 1000Å. In addition, we show that the GaAs lattice is translationally incommensurate with the Si substrate and that the in-plane [001] axes are misaligned by 3–5°. Thermal expansion measurements of the out-of-plane lattice parameters of the film and substrate indicate that the GaAs in-plane thermal expansion follows from the anharmonicity of the substrate. |
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