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Effect of band mixing of the hole subbands in quantum wells on the optical transition intensities in a magnetic field
Affiliation:1. State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China;2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China;3. Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China;4. University of Chinese Academy of Sciences, Beijing, 100049, China;1. King Saud University, Department of Physics and Astronomy, College of Sciences, 11451 Riyadh, Saudi Arabia;2. University of Monastir, Faculty of Sciences, LMON, 5019 Monastir, Tunisia
Abstract:The results of interband magneto-optical measurements of GaAs quantum wells are compared with the calculated transition energies and amplitudes in a six-band envelope function approach. The evaluation of the transition matrix elements helps to explain all the essential features of the observed spectra and elucidate the complex effects of hole subbands mixing. Excitonic corrections are included in a simplified manner while a 11% larger value of the electron effective mass is needed to fit the experimental data.
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