Band structure of InN |
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| Institution: | 1. Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Faculté des Sciences, Université de Monastir, Monastir 5000, Tunisia;2. Institut Supérieur des Métiers du Bâtiment, des travaux publics et de l’urbanisme, Ecolé Supérieure Polytechnique, BP 4030 Nouakchott, Mauritanie;3. Department of Physics, Faculty of Science and Technology, Abdou Moumouni University, BP10662 Niamey, Niger;4. Department of Physics and Material Sciences Center, Philipps-University of Marburg, Renthof 5, 35032 Marburg, Germany |
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| Abstract: | The energy band structure of wurtzite-structure semiconductive InN is predicted using empirical nearest-neighbor tight-binding theory. The tight-binding parameters are extrapolated from those of zincblende InP, InAs, and InSb by using empirical rules for the dependences of the parameters on bond length and on row of the Periodic Table. The predicted band gap is direct and agrees well with the data for this potential orange light-emitter. It is suggested that zincblende InN, if it can be grown, also will have a band-gap near 2 eV. |
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