Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions |
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Authors: | Masao Takahashi Takeru Shishido Hitoo Iwasa Hikaru Kobayashi |
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Institution: | (1) ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
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Abstract: | The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually
decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the
local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage,
the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy
conversion efficiency.
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Keywords: | defect passivation cyanide method silicon solar cell local photovoltage energy conversion efficiency |
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