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Optically induced structural transformation in disordered kesterite Cu2ZnSnS4 |
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| Authors: | M Ya Valakh V M Dzhagan I S Babichuk X Fontane A Perez-Rodriquez S Schorr |
| Institution: | 1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine 2. Catalonia Institute for Energy Research, Sant Adria del Besos (Barcelona), 08930, Spain 3. Departament d’Electronica, Universitat de Barcelona, Barcelona, 08028, Spain 4. Helmholtz-Zentrum Berlin fur Materialien und Energie, D-14109, Berlin, Germany 5. Freie Universitat Berlin, Institute of Geological Sciences, Berlin, 12249, Germany |
| Abstract: | The kesterite-structured semiconductor Cu2ZnSnS4 is one of the most promising compound for earth-abundant low-cost solar cells. One of the complex problem on this way deals with its stoichiometry. In this work Raman spectra of Cu-rich Cu2ZnSnS4 crystals are discussed in connection with the non-stoichiometric composition and disordering within the cation sublattice of the kesterite. The shift of the main A-peak from 338 to 331 cm?1 and its broadening are attributed here to transition from the kesterite (I $\bar 4$ symmetry) to the disordered kesterite structure (I $\bar 4$ 2m symmetry). It is shown that this transition may also be driven by an intense light, which could stimulate transformation of Cu+-ion to Cu2+-ions and facilitates generation of CuZn-defects on 2d-crystalographic positions. |
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