Mobility of electrons in nondegenerate semiconductors considering electron-electron scattering

Spitzer andHärm [1] have investigated the velocity distribution of electrons in the presence of a weak electric field in an ionized gas. Introducing the concept of time of relaxation τ′, due to electron-ion and electron-electron scattering, and using the results ofSpitzer andHärm [1], the authors have obtained an expression for τ′ which is applicable to semiconductors with little modification. In this paper the authors have used this expression for τ′ to obtain the mobility of electrons in nondegenerate semiconductors, taking into account the scattering by lattice vibrations, electron-ion interactions and electron-electron interactions.