氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO2层,在载玻片衬底上制备出了SnO2/Ag/SnO2多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10-2 Ω-1;此时,薄膜的电阻率为9.8×10-5Ω·cm,方电阻为9.68Ω/sq,在400～800 nm可见光区的平均光学透射率达85％;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO2层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85％以上,电阻率为1.22×10-4Ωcm,方电阻为12.05Ω/sq.

Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Tri layer Film

SnO2/Ag/SnO2 tri layer thin films were prepared on glass substrates by RF magnetron sputtering of SnO2 with different O2/Ar ratio and DC magnetron sputtering of Ag. Several analytical tools such as Hall measurements, four point probe and ultraviolet visible near infrared (UV Vis NIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties. When O2/Ar ratio is 1∶14, the film had a figure of merit of 1.69×10－2 Ω－1, the resistivity is 9.8×10－5 Ω·cm, and the sheet resistance is 9.68Ω/sq, while the average transmittance is still as high as 85% in the visible light region. In addition, when O2/Ar ratio is 1: 14, The flexible SnO2/Ag/SnO2 tri layer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates, the average transmittance is above 85%, the resistivity is 1.22×10－4 Ω·cm, and the sheet resistance is 12.05 Ω/sq.