Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers |
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Authors: | YS Ryu TW Kim |
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Institution: | a Department of Physics and Quantum-functional Semiconductor Research Center, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Republic of Korea b Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea |
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Abstract: | Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 − xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 − xCdxTe epilayers can be converted to p-Hg1 − xCdxTe epilayers by in situ annealing. |
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Keywords: | 68 55 Bd 81 15 Ef 81 40 Ef |
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