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On a presence of SimHn clusters in a-Si:H/c-Si structures |
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| Authors: | M Kopáni H Kobayashi N Fujiwara M Jergel |
| Institution: | a Comenius University, Faculty of Medicine, Sasinkova 4, 811 08 Bratislava, Slovak Republic b Institute of Physics of SAS, Dubravska cesta 9, 845 11 Bratislava, Slovak Republic c Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organizarion, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan d Laboratoire de Cristallographie du CNRS, BP 166, 38042 Grenoble Cedex 09, France |
| Abstract: | Dominant aim of the paper was to verify the existence of the SimHn clusters in a-Si:H layers. Thin layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on both glass and crystalline silicon substrates. Their IR and structural properties were investigated by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction at grazing incidence angle (XRDGI). We have found that the layer probably consists of larger structurally ordered parts corresponding to SimHn clusters and separated groups of (Si-Hx)N. The ordered parts could be identified as some of SimHn clusters ranging from (10, 16) to (84, 64) represented by corresponding vibration frequencies in three following IR regions: 600-750, 830-900 and 2080-2180 cm−1. XRDGI measurement indicates that diffraction maximum at around 2Θ = 28° can be attributed to an existing SimHn cluster. |
| Keywords: | 61 72 Dd 61 43 Dq 78 30 j |
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