|
|||||
|
|
High-k Mg-doped ZST for microwave applications |
|
| Authors: | A. Ioachim M.G. Banciu L. Nedelcu H.V. Alexandru A. Dutu |
| Affiliation: | a National Institute of Materials Physics, P.O. Box MG-7, Bucharest-Magurele, Romania b University of Bucharest, Faculty of Physics, Romania c S.C. IPEE S.A., Curtea de Arges, Romania |
| Abstract: | The (Zr0.8Sn0.2)TiO4 material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260-1320 °C for 2 h. The effects of sintering parameters like sintering temperature (Ts) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m3 with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant ?r ∼ 37 and high values of the Q × f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc. |
| Keywords: | High-k dielectrics Mg-doped ZST Dielectric resonators Microwaves |
| 本文献已被 ScienceDirect 等数据库收录！ | |