X-ray metrology for advanced silicon processes |
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Authors: | C. Wyon J.P. Gonchond A. Michallet L. Kwakman |
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Affiliation: | a CEA-LETI Grenoble, 850 rue Jean Monnet, 38926 Crolles, France b STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France c Philips Semiconductors, 850 rue Jean Monnet, 38926 Crolles, France |
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Abstract: | X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/porous low κ processes, which are developed for the next generation (≤65 nm) integrated circuits. Sensitivity of XRR and XRF is sufficient to detect drifts of the copper barrier layer, copper seed layer and Cu CMP (chemical-mechanical polishing) processes. Their metrology key parameters comply with production requirements. SAXS allows determining the pore structure of low κ films: average pore size and pore size distribution. |
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Keywords: | X-ray reflectivity (XRR) Small angle X-ray scattering (SAXS) X-ray fluorescence (XRF) Cu interconnects Low κ Dielectrics |
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