Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition |
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Authors: | D.G. Zhao Z.S. Liu S.M. Zhang Hui Yang X.Y. Li |
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Affiliation: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China b Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Rd., Shanghai 200083, China |
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Abstract: | The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of Al atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. |
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Keywords: | 81.15.Gh 61.10.-i 73.61.Ey |
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