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Laser-induced thermoelectric voltage in normal state MgB2 thin films |
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| Authors: | Songqing Zhao Kun Zhao Shufang Wang Kui-juan Jin Bolin Cheng |
| Institution: | a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China b Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China c International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China |
| Abstract: | Laser-induced voltage has been observed in c-axis oriented MgB2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB2. |
| Keywords: | 73 50 Pz 74 78 -w 81 15 Gh |
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