High-intensity Si cluster ion emission from a silicon target bombarded with large Ar cluster ions |
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Authors: | Satoshi Ninomiya Takaaki Aoki Toshio Seki Jiro Matsuo |
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Affiliation: | Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan |
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Abstract: | Secondary ions emitted from Si targets were measured with a quadrupole mass spectrometer under large Ar cluster and monomer ion bombardment. Incident ion beams with energies from 7.5 to 25 keV were used and the mean size of the Ar cluster ion was about 1000 atoms/cluster. Sin+ ions with n values up to n = 8 were detected under Ar cluster ion bombardment, whereas Si cluster ions were scarcely detected under Ar monomer ion bombardment. These cluster ion yields showed the power law dependence on the cluster size. |
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Keywords: | Ar cluster ion Secondary ion Low energy Sputtering yield |
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