Defect structure and dielectric properties of Bi-based pyrochlores probed by positron annihilation

Positron annihilation lifetime (PAL) and Doppler broadening (DB) techniques have been performed to identify structural defects of the bismuth based pyrochlore systems with generic formula (Bi_1.5Zn_0.5)(Zn_0.5−x/3Ti_xNb_1.5−2x/3)O₇ (x = 0, 0.25, 0.5,1.0, 1.5). We found that all studied compounds contain substantial amount of the lattice vacancy defects, the variation of the annihilation lifetime suggests that the defects structure undergoes significant changes. The complex defects could be produced with increasing content of Ti, resulting in a drop in the intensity I₂ in the Ti-rich sample. At 1 MHz their dielectric constant (?′) varies from 150 for Ti-poor system to 210 for Ti-rich system and loss tangent (tan δ) remains rather low level. The high dielectric constant response of the BZTN ceramics is attributed to loosening state of cations located in the center of octahedral, so favor off-center displacement. The occurrence of complex defects help to enhance the dielectric constant.