Positive secondary Ion emission from Si1−xGex bombarded by O2 |
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Authors: | A Mikami T Okazawa Y Kido |
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Institution: | a Mobile Energy Company, SANYO Electric Co., Ltd., Nishiku, Kobe, Hyogo 651-2242, Japan b National Institute of Advanced Industrial Science and Technology, Ikeda, Osaka 563-8577, Japan c Department of Physics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan |
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Abstract: | The positive secondary ion yields of B+ (dopant), Si+ and Ge+ were measured for Si1−xGex (0 ≤ x ≤ 1) sputtered by 5.5 keV 16O2+ and 18O2+. It is found that the useful yields of Ge+ and B+ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of 18O by nuclear resonant reaction analysis (NRA: 18O(p,α)15N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B+, Si+ and Ge+ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O2+ irradiation. |
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Keywords: | 82 80 Ms 82 80 Yc |
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