Application of spectroscopic ellipsometry to the investigation of the optical properties of cobalt-nanostructured silica thin layers

Spectroscopic ellipsometry is used to investigate optical properties of cobalt-implanted silica thin films. The films under investigation are 250 nm thick thermal SiO₂ layers on Si substrates implanted with Co⁺ ions at energy of 160 keV and at fluences of 10¹⁷ ions/cm² for different temperatures of substrate during implantation (77 and 295 K). Changes due to Co⁺ implantation are clearly observed in the optical response of the films. Optical behaviours are furthermore different for the three implantation temperatures. To understand the optical responses of these layers, the ellipsometric experimental data are compared to different models including interference effects and metal inclusions effects into the dielectric layer. The simulated ellipsometric data are obtained by calculating the interferences of an inhomogeneous layer on a Si substrate. The material within this layer is considered as an effective medium which dielectric function is calculated using the Maxwell-Garnett effective medium approximation. We show that although the structures of these layers are very complicated because of ion-implantation mechanisms, quite simple models can provide relatively good agreement. The possibilities of ellipsometry for the study of the optical properties of such clusters-embedded films are discussed. We especially provide the evidence that ellipsometry can give interesting information about the optical properties of nanostructured layers. This is of special interest in the field of nanostructured layered systems where ellipsometry appears to be a suitable optical characterization technique.