ITON Schottky contacts for GaN based UV photodetectors |
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Authors: | N Vanhove A Lorenz G Borghs |
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Institution: | a Interuniversity Microelectronics Centre, IMEC, Leuven, Belgium b Eindhoven University of Technology, Eindhoven, The Netherlands |
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Abstract: | Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I-V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 103 at −1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined. |
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Keywords: | ITON Schottky contact GaN UV photodetector |
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