Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films |
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Authors: | Ran Jiang Erqing Xie Zhiyong Chen Zhenxing Zhang |
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Affiliation: | School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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Abstract: | The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10−8 A/cm2 at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure. |
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Keywords: | Hafnium oxynitride Dielectrics Diffusion Electrical properties Permittivity |
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