Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition |
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Authors: | Xiangdong Xu Hockleong Kweh Zhengcao Zhang Zhihong Liu Wei Zhou Wei Zhang Peixin Qian |
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Institution: | Institute of Microelectronics, Tsinghua University, Beijing 100084, PR China |
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Abstract: | Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si0.7Ge0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar+ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe. |
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Keywords: | 81 05 Hd 62 40 +i 81 15 Gh 61 72 Tt |
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