ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO |
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Authors: | JS Wright K Ramani R Singh SJ Pearton F Ren |
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Institution: | a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA b Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA c Department of Physics, University of Florida, Gainesville, FL 32611, USA |
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Abstract: | There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB2/Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10−3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB2. The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO. |
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Keywords: | ZnO Contacts Borides |
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