Synthesis and characterization of Al-N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer |
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Authors: | QY Zhu GD Yuan JY Huang LP Zhu BH Zhao JG Lu |
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Institution: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | Al-N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT) homo-buffer layer. The influence of HT buffer layer deposition time (Tht) on film properties was investigated by X-ray diffraction (XRD), scanning electron micro-spectra (SEM) and Hall measurement. The Al-N codoped ZnO film was improved evidently in its crystal quality by varying the value of Tht. Results of Hall effect showed that all of the Al-N codoped ZnO thin films were p-type conduction and had resistivity mainly below 50 Ω cm. The optimum deposition time of HT buffer layer is around 3 min from the comprehensive consideration of structural, electrical, and optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO. |
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Keywords: | 61 72 V 72 80 E 73 61 G 78 66 H |
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