Characterization of GaN layers grown on silicon-on-insulator substrates |
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Authors: | S Tripathy LS Wang SJ Chua |
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Institution: | Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602, Singapore |
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Abstract: | In this study, we report growth and characterization of GaN layers on (1 0 0)- and (1 1 1)-oriented silicon-on-insulator (SOI) substrates. Using metalorganic chemical vapor deposition (MOCVD) technique, GaN layers are grown on KOH treated Si (1 0 0) overlayers of thin SIMOX SOI substrates. Growth of GaN on such surface with an AlN buffer leads to c-axis orientated textured GaN. This is evident from high-resolution X-ray diffraction (HRXRD) measurement, which shows a much broader rocking curve linewidth. Significantly enhanced photoluminescence (PL) intensity and partial stress relaxation is observed in GaN layers grown on these SOI substrates. Furthermore, GaN grown on (1 1 1)-oriented bonded SOI substrates shows good surface morphology and improved optical quality. Micro-Raman, micro-PL, and HRXRD measurements reveal single crystalline hexagonal GaN oriented along (0 0 0 1) direction. We also report growth and characterization of InGaN/GaN multi-quantum well structures on (1 1 1)-oriented bonded SOI. Such an approach to realize nitride epilayers would be useful to fabricate GaN-based micro-opto-electromechanical systems (MOEMS) and sensors. |
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Keywords: | GaN Silicon-on-insulator (SOI) X-ray diffraction Optical spectroscopy |
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