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Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers |
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| Authors: | E Pin?ík H Kobayashi M Takahashi M Jergel L Ortega |
| Institution: | a Institute of Physics of SAS, Dúbravská Cesta 9, 845 11 Bratislava, Slovak Republic b Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organizarion, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan c CINVESTAV-IPN, Electrical Engineering Departmant, Avenida IPN No. 2508, 07360 Mexico, D.F., Mexico d Laboratoire de Cristallographie du CNRS, BP 166, 38042 Grenoble Cedex 09, France e Department of Ceramics, Glass and Cement of FCFT of SUT, Radlinského 9, 812 37 Bratislava, Slovak Republic |
| Abstract: | |
| Keywords: | 81 65 82 30 78 66 81 60 Cp |
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