An XPS study on ion beam induced oxidation of titanium silicide |
| |
Authors: | P Osiceanu |
| |
Institution: | “I.G. Murgulescu” Institute of Physical Chemistry, Splaiul Independentei 202, Bucharest 060041, Romania |
| |
Abstract: | Titanium silicides (TiSi2) films grown on Si(1 0 0) substrate were investigated by ex situ XPS depth profiling after athermal ion beam induced oxidation (IBO) at 12 keV O2+ incident energy and normal incidence. The composition and stoichiometry of these films were quantitatively determined as chemical state relative concentrations versus sputter time. “In depth” silicon and titanium oxidation states have been obtained after spectra deconvolution, showing a mixture of silicon dioxide, titanium dioxide, titanium suboxides, elemental titanium and residual traces of titanium nitride. Thermochemical data based on the corresponding enthalpies of formation of the oxides cannot explain our experimental results as in the case of low energy IBO, an oxygen defective altered layer is formed, presenting features of a reduced TiOx phase. |
| |
Keywords: | Titanium silicide Ion beam oxidation XPS depth profiling Oxidized altered layer &ldquo In depth&rdquo chemical states Titanium reactivity |
本文献已被 ScienceDirect 等数据库收录! |
|