Growth of nanosize Ag dots with uniform height on?a?Si(111)-7×7-C2H5OH surface, and their electronic properties |
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Authors: | Xiaohong Jiang Zhaoxiong Xie Masayuki Shimojo and Ken-ichi Tanaka |
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Institution: | (1) Department of Physics, Xiamen University, 361005 Xiamen, China;(2) Pen-Tung Sah MEMS Research Center, Xiamen University, 361005 Xiamen, China;(3) Department of Physics, La Trobe University, Bundoora, VIC, 3086, Australia; |
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Abstract: | C2H5OH adsorbs by dissociating on Si-adatom/Si-rest atom pair sites on Si(111)-7×7 surfaces. A half of six Si adatoms and three
Si rest atoms are changed to Si-OC2H5 and Si-H in every half unit cell at the saturation. When an Ag atom was deposited on this surface, it was stabilized on an
intact Si adatom remained in the half unit cell and it did not migrate by hopping. With the increasing number of deposited
atoms, uniform height with ca. 5-nm size Ag dots were grown in wide area. A similar growth mode was observed by depositing
Ga and Zn on this surface. We deduced that the uniform height growth of 5-nm dots may be given by a layer-by-layer growth
of dots in the natural templates composed of six half unit cells. Scanning tunneling spectroscopy indicated that one-monolayer
Ag dots had nonmetallic energy gap of ca. 2.2 V at the Fermi level, but the energy gap became narrower with the increasing
number of layers and became metallic at eight or nine layers. |
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