| a—Si：H／c—Si异质结的高频C—V特性 |
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| 引用本文： | 毛友德. a—Si：H／c—Si异质结的高频C—V特性[J]. 微电子学与计算机, 1993, 10(8): 46-48 |
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| 作者姓名： | 毛友德 |
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| 作者单位： | 合肥工业大学应用物理系 合肥 |
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| 摘 要： | 测量了GD a-Si:H/n-c-Si异质结的高频C-V特性,由平带电压的偏移,计算了有效表面电荷和表面态密度,应用突变异质结能带模型对结果作了分析.
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| 关 键 词： | 异质结 C－V特性 高频 |
High Frequency C-V Characteristics of a-Si:H/c-Si Heterojunctions |
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| Mao Youde. High Frequency C-V Characteristics of a-Si:H/c-Si Heterojunctions[J]. Microelectronics & Computer, 1993, 10(8): 46-48 |
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| Authors: | Mao Youde |
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| Affiliation: | Hefei University of Technology |
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| Abstract: | The high frequency C-V characteristics of GD a-Si:H / n-c-Si heterojunctions are measured. The effective surface charge and effective surface state density are also determined from flat-band voltage. The experiment results are analyzed by abrupt heterojunction energy band model. |
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| Keywords: | High frequency C-V charateristics Hcterojunctions Flat-band Voltage |
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