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The gold donor and acceptor level in p-type silicon |
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| Authors: | P van Staa R Kassing | |
| Institution: | Institut für Angewandte Physik der Universität Münster, Corrensstraβe 2-4, 4400, Münster, FRG |
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| Abstract: | DLTS measurements on the gold donoe and acceptor level in p-type silicon and reported. From the experimental data it must be concluded that the gold donor and the acceptor level are caused by the same defect, that the acceptor level lying 0.546eV below the conduction band is temperature independently pinned to the conduction band and that the hole capture cross section of the acceptor level  | |
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