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Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition |
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| Authors: | Fan Ji-Bin Liu Hong-Xia Gao Bo Ma Fei Zhuo Qing-Qing and Hao Yue |
| Institution: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China |
| Abstract: | HfO2, band alignment, annealing, X-ray photoelectron spectroscopy, dipoles |
| Keywords: | HfO2 band alignment annealing X-ray photoelectron spectroscopy dipoles |
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