Degradation of the transconductance of a gate-modulated generation current in nMOSFET |
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Authors: | Chen Hai-Feng Guo Li-Xin and Du Hui-Min |
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Institution: | School of Electronic Engineering,Xi’an University of Posts and Telecommunications,Xi’an 710121,China |
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Abstract: | The degradation of transconductance(G) of a gate-modulated generation current I GD in a LDD nMOSFET is investigated.The G curve shifts rightward under the single electron-injection-stress(EIS).The trapped electrons located in the gate oxide over the LDD region(QL) makes the effective drain voltage diminish.Accordingly,the G peak in depletion(GMD) and that in weak inversion(GMW) decrease.It is found that △GMD and △GMW each have a linear relationship with the n-th power of stress time(tn) in a dual-log coordinate:△G MD∝tn,△GMD∝tn(n=0.25).During the alternate stress,the injected holes neutralize QL induced by the previous EIS.This neutralization makes the effective V D restore to the initial value and then the I GD peak recovers completely.Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel(QC).As a result,G MW only recovers to circa 50% of the initial value after the hole-injection-stress(HIS).Instead,G MD almost recovers.The relevant mechanisms are given in detail. |
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Keywords: | generation current transconductance electron injection alternate stress degradation |
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