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New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer |
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| Authors: | Zhang Xian-Jun Yang Yin-Tang Duan Bao-Xing then Bin Chai Chang-Chun and Song Kun |
| Institution: | 373# Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education School of Mieroeleetronics, Xidian University, Xi＇an 710071, China |
| Abstract: | |
| Keywords: | 4H silicon carbide metal semiconductor field-effect transistor Poisson＇s equation |
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