Comparison of 1300 nm quantum well lasers using different material systems |
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| Authors: | Lin G. Lee C.P. |
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| Affiliation: | (1) Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China |
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| Abstract: | The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems. |
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| Keywords: | band offset ratio band structure material gain 1300-nm band quaternary material system |
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