| 铁电存储器在存储测试系统中的应用 |
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| 引用本文： | 张毅,申川. 铁电存储器在存储测试系统中的应用[J]. 电子设计工程, 2011, 19(21): 17-20 |
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| 作者姓名： | 张毅 申川 |
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| 作者单位： | 中国工程物理研究院总体工程研究所,四川绵阳,621900 |
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| 摘 要： | 为了实现环境试验的存储测试系统,采用了FRAM存储器M28W640结合SOC片上系统C8051F340的设计,通过分析其性能和接口电路,编写了相应的读写程序。由于这种并行非易失性存储测试技术方式具有高速读写、超低功耗、几乎无限次擦写,读写程序编写简便的优点,非常适合在此类存储测试系统中使用。
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| 关 键 词： | 铁电存储器 M28W640 存储测试系统 片上系统 |
Application of FRAM using in storage measurement system |
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| ZHANG Yi,SHEN Chuan. Application of FRAM using in storage measurement system[J]. Electronic Design Engineering, 2011, 19(21): 17-20 |
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| Authors: | ZHANG Yi SHEN Chuan |
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| Affiliation: | (Institute of Systems Engineering,CAEP,Mianyang 621900,China) |
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| Abstract: | To design the storage measurement system,a ferroelectric RAM M28W640 and system on chip C8051F340 microprocessor are used. The write and read programs are complied by analyzed the chip performance characteristics and interface circuits. Because this parallel nonvolatile storage measurement technique has much advantages, such as high speed access, low power, almost infinite times erasure, simple write and read program. These advantages will make this mode very suitable for using in data memory measurement system. |
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| Keywords: | FRAM M28W640 storage measurement system system on chip |
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