| Sr-doping effects on conductivity,charge transport,and ferroelectricity of Ba0.7La0.3TiO3 epitaxial thin films |
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| 作者姓名： | 李强 王岛 张岩 李育珊 张爱华 陶瑞强 樊贞 曾敏 周国富 陆旭兵 刘俊明 |
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| 作者单位： | Institute for Advanced Materials;Guangdong Provincial Key Laboratory of Optical Information Materials;National Center for International Research on Green Optoelectronics;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant No.51872099);the Science and Technology Program of Guangzhou,China(Grant No.2019050001);the Fund from the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,China(Grant No.2017B030301007);the 111 Projec,China;sponsored by the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme,China(2016)。 |
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| 摘 要： | Sr-doped Ba0.7La0.3TiO3(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements.Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures.For the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases.The metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering mode.The difference in charge transport behavior dependent on the A-site cation doping,is clarified.It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical resistivity.Interestingly,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=0.40.These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.
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| 关 键 词： | Sr-doping transport mechanism BSLTO thin film ferroelectric metal |
Sr-doping effects on conductivity,charge transport,and ferroelectricity of Ba_(0.7)La_(0.3)TiO_3 epitaxial thin films |
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| Qiang Li,Dao Wang,Yan Zhang,Yu-Shan Li,Ai-Hua Zhang,Rui-Qiang Tao,Zhen Fan,Min Zeng,Guo-Fu Zhou,Xu-Bing Lu,Jun-Ming Liu.Sr-doping effects on conductivity,charge transport,and ferroelectricity of Ba0.7La0.3TiO3 epitaxial thin films[J].Chinese Physics B,2021(2). |
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| Authors: | Qiang Li Dao Wang Yan Zhang Yu-Shan Li Ai-Hua Zhang Rui-Qiang Tao Zhen Fan Min Zeng Guo-Fu Zhou Xu-Bing Lu Jun-Ming Liu |
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| Institution: | (Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Guangdong Provincial Key Laboratory of Optical Information Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;National Center for International Research on Green Optoelectronics,South China Normal University,Guangzhou 510006,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210009,China) |
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| Abstract: | Sr-doped Ba_(0.7)La_(0.3)TiO_3(BSLTO) thin films are deposited by pulsed laser deposition, and their microstructure, conductivity, carrier transport mechanism, and ferroelectricity are systematically investigated. The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films, resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements. Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures. For the films with semiconducting behavior, the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases. The metalic conductive behaviors in the films with Sr = 0.30, 0.40 conform to thermal phonon scattering mode. The difference in charge transport behavior dependent on the A-site cation doping, is clarified. It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping, higher carrier mobility, and lower electrical resistivity. Interestingly, the piezoelectric force microscopy(PFM) results demonstrate that all the BSLTO films can exhibit ferroelectricity, especially for the room temperature metallic conduction film with Sr = 0.40. These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides. |
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