| Snapback-free shorted anode LIGBT with controlled anode barrier and resistance |
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| 作者姓名： | 李顺 张金沙 陈伟中 黄垚 贺利军 黄义 |
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| 作者单位： | College of Electronics Engineering;Institute of Microelectronics |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。 |
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| 摘 要： | A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier Vbarrierand resistance RSAin anode,named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction,while the anode resistance includes the polysilicon layer and N-float.At forward conduction stage,the Vbarrierand RSAcan be increased by adjusting the doping of the P-float and polysilicon layer,respectively,which can suppress the unipolar mode to eliminate the snapback.At turn-off stage,the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float)can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device.The simulation results show that at the same Von of 1.3 V,the Eoffof the CBR LIGBT is reduced by 85%,73%,and 59.6%compared with the SSA LIGBT,conventional LIGBT,and TSA LIGBT,respectively.Additionally,at the same Eoffof 1.5 m J/cm2,the CBR LIGBT achieves the lowest Von of 1.1 V compared with the other LIGBTs.
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| 关 键 词： | shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off |
Snapback-free shorted anode LIGBT with controlled anode barrier and resistance |
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| Shun Li,Jin-Sha Zhang,Wei-Zhong Chen,Yao Huang,Li-Jun He,Yi Huang.Snapback-free shorted anode LIGBT with controlled anode barrier and resistance[J].Chinese Physics B,2021(2). |
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| Authors: | Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang |
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| Institution: | (College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier Vbarrierand resistance RSAin anode, named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the Vbarrierand RSAcan be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float) can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same Von of 1.3 V,the Eoffof the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same Eoffof 1.5 m J/cm2, the CBR LIGBT achieves the lowest Von of 1.1 V compared with the other LIGBTs. |
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