Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation |
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Authors: | Jin-Jin Tang Gui-Peng Liu Jia-Yu Song Gui-Juan Zhao Jian-Hong Yang |
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Institution: | (School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;National&Local Joint Engineering Laboratory of Light-conversion Materials and Technology,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China) |
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Abstract: | Gallium nitride(GaN)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to parti-cles radiation,which can cause the degradation i... |
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