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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation
Authors:Jin-Jin Tang  Gui-Peng Liu  Jia-Yu Song  Gui-Juan Zhao  Jian-Hong Yang
Institution:(School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;National&Local Joint Engineering Laboratory of Light-conversion Materials and Technology,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)
Abstract:Gallium nitride(GaN)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to parti-cles radiation,which can cause the degradation i...
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