Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment |
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| Authors: | Xing-Ye Zhou Xin Tan Yuan-Jie Lv Guo-Dong Gu Zhi-Rong Zhang Yan-Min Guo Zhi-Hong Feng Shu-Jun Cai |
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| Institution: | (National Key Laboratory of Application Specific Integrated Circuit,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China) |
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| Abstract: | AlGaN/GaN high-electron-mobility transistors(HEMTs)with postpassivation plasma treatment are demonstrated and investigated for the first time.The results show t... |
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