Doping effect on the structure and physical properties of quasi-one-dimensional compounds Ba_9Co_3(Se_(1-x)S_x)15(x=0–0.2) |
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作者单位: | 1.School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China;2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;3.School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;4.Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;5.Materials Research Laboratory at Songshan Lake, Dongguan 523808, China |
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基金项目: | Project supported by the Doctoral Fund of Henan University of Technology (Grant No. 2020BS029), the National Key R&D Program of China (Grant Nos. 2018YFA0305700 and 2017YFA0302900), the National Natural Science Foundation of China (Grant Nos. 11974410 and 11820101003), and the Stable Support Plan Program of Shenzhen Natural Science Fund (Grant No. 20200925152415003). |
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摘 要: | A series of samples of Ba_9Co_3(Se_(1-x)S_x)15 (x=0,0.05,0.1,0.15,0.2) with quasi-one-dimensional (1D) structure were successfully synthesized under high-temperature and high-pressure conditions.The influence of partial substitution of S for Se on the structure,electronic transport,and magnetic properties of Ba_9Co_3(Se_(1-x)S_x)15 has been investigated in detail.The x-ray diffraction data shows that the lattice constant decreases linearly with increasing S-doping level,which follows the Vegrad’s law.The doped S atoms preferentially occupy the site of Se atoms in CoSe_6 octahedron.Physical properties measurements indicate that all the samples of Ba_9Co_3(Se_(1-x)S_x)15 are semiconducting and display spin glass behavior.As the replacement of Se by smaller size S,although the inter-chain distance decreases,the electronic hopping between CoSe/S_6 chains is weakened and leads to an increase of band gap from 0.75 e V to 0.86 e V,since the S-3p electrons are more localized than Se-4p ones.Ba_9Co_3(Se_(1-x)S_x)15 exhibits 1D conducting chain characteristic.
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收稿时间: | 2021-06-07 |
Doping effect on the structure and physical properties of quasi-one-dimensional compounds Ba9Co3(Se1-xSx)15 (x = 0-0.2) |
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Institution: | 1.School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450007, China;2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;3.School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;4.Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;5.Materials Research Laboratory at Songshan Lake, Dongguan 523808, China |
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Abstract: | A series of samples of Ba9Co3(Se1-xSx)15 (x = 0, 0.05, 0.1, 0.15, 0.2) with quasi-one-dimensional (1D) structure were successfully synthesized under high-temperature and high-pressure conditions. The influence of partial substitution of S for Se on the structure, electronic transport, and magnetic properties of Ba9Co3(Se1-xSx)15 has been investigated in detail. The x-ray diffraction data shows that the lattice constant decreases linearly with increasing S-doping level, which follows the Vegrad's law. The doped S atoms preferentially occupy the site of Se atoms in CoSe6 octahedron. Physical properties measurements indicate that all the samples of Ba9Co3(Se1-xSx)15 are semiconducting and display spin glass behavior. As the replacement of Se by smaller size S, although the inter-chain distance decreases, the electronic hopping between CoSe/S6 chains is weakened and leads to an increase of band gap from 0.75 eV to 0.86 eV, since the S-3p electrons are more localized than Se-4p ones. Ba9Co3(Se1-xSx)15 exhibits 1D conducting chain characteristic. |
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Keywords: | doping effect one-dimensional chain spin glass high-pressure synthesis |
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