| Abstract: | The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_x) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiN_x,the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiNx films by means of tuning N_2/SiH_4 ratio and radio frequency(RF) power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR) and micro Raman spectroscopy were used to characterize the SiN_x films by measuring Si-H and N-H bonds' intensities.It was found that the more Si-H bonds lead to the higher dielectric strength. |
