High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities |
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Authors: | O K Kuvandikov E U Arzikulov A I Kovalev D I Tetel’baum |
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Institution: | (1) Samarkand State University, Universitetskii bul’v. 15, Samarkand, 703029, Uzbekistan;(2) Central Institute of Ferrous Metallurgy, Moscow, 107005, Russia;(3) Physicotechnical Research Institute, Nizhni Novgorod, Russia |
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Abstract: | The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO2: Si nanocomposites is studied. The SiO2: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO2: Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals. |
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