| T-ZnOw/树脂基复合材料逾渗行为的模拟与研究 |
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| 引用本文： | 马泽宇,王晓亮,王翠梅,肖红领,杨翠柏.T-ZnOw/树脂基复合材料逾渗行为的模拟与研究[J].半导体学报,2010,31(5):053002-4. |
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| 作者姓名： | 马泽宇 王晓亮 王翠梅 肖红领 杨翠柏 |
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| 作者单位： | Materials;Science;Center;Institute;Semiconductors;Chinese;Academy;Sciences;Laboratory;Semiconductor; |
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| 基金项目： | supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYYJ-0701-02);;the National Natural Science Foundation of China(Nos.60890193,60606002,60906006);;the State Key Development Program for Basic Research of China(Nos.2006CB604905,2010CB327503);;the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos. ISCAS2008T01,ISCAS2009L02). |
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| 摘 要： | 从T-ZnOw空间结构出发，建立新型T-ZnOw/树脂基复合材料三维点阵模型，并利用Monte Carlo方法对系统逾渗导通行为进行了模拟，获得点阵逾渗阈值为23.2％。结合实际计算并获得了T-ZnOw的临界掺入比例，与文献报道的结果基本吻合。计算表明临界掺入比例主要取决于T-ZnOw长径比，且与晶须尺寸及复合材料的制备工艺有关。对T-ZnOw复合材料吸波机理进行了探讨，发现电导损耗和界面极化效应引发T-ZnOw针状晶体尖端放电现象可能是入射电磁波能量耗散的主要途径。
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| 关 键 词： | 四针状氧化锌晶须 树脂基复合材料 渗流阈值 拟蒙特卡罗方法 模拟 混合比例 制备方法 复合机制 |
| 修稿时间： | 1/12/2010 8:53:42 AM |
Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite |
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| Ma Zeyu,Wang Xiaoliang,Wang Cuimei,Xiao Hongling and Yang Cuibai.Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite[J].Chinese Journal of Semiconductors,2010,31(5):053002-4. |
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| Authors: | Ma Zeyu Wang Xiaoliang Wang Cuimei Xiao Hongling and Yang Cuibai |
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| Institution: | Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A novel three-dimensional lattice model of tetrapod-like zinc oxide whisker (T-ZnOw) resin matrix composite with a coordination number of 12 is constructed based on the special structure of T-ZnOw; the percolation phenomenon of the system is simulated by theMonte Carlo method, and the percolation threshold is obtained at 23.2%. The critical mixing ratio of T-ZnOw is calculated by considering the practical factors, and the result basically agrees with the reported one. Theoretical calculation shows that the critical mixing ratio mainly depends on the L/D ratio of T-ZnOw, and is also related to the size of T-ZnOw as well as the preparation method of the composite. The microwave absorbing mechanism of T-ZnOw composite is discussed, and conductivity loss and point discharge caused by the polarization effect are regarded to be two important means of energy dissipation. |
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| Keywords: | T-ZnOw percolation microwave absorbing property |
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