| Photoluminescence of Self－Assembled InAs／GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain－Reducing Layer |
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| 作者姓名： | 方志丹 龚政 苗振华 徐晓华 倪海桥 牛智川 |
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| 作者单位： | NationalLaboratoryforSuperlatticesandMicrostructures,InstituteofSemiconductors,Beijing100083ChineseAcademyofSciences,Beijing100083 |
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| 摘 要： | Self-assembled lnAs/GaAs quantum dots covered by the 1-nm InxAI(1-x)As (x = 0.2, 0.3) and 3-nm In0.2Ga0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long-wavelength of 1.33μm and the energy separation between the ground and the first-excited state of 86meV are observed at room temperature. Furthermore, comparative study proves that the energy separation can increase to 91 meV by multiple stacking.
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| 关 键 词： | InAs／GaAs 量子点 光致发光 光学性质 砷化镓 砷化铟 自组装 InAlAs InGaAs 半导体 砷铝铟化合物 砷镓铟化合物 |
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