多步退火对(Pb,La)(Zr,Ti)O_3反铁电厚膜的影响

采用溶胶-凝胶技术,在Pt(111)/Ti/SiO2/Si(100)基底上制备Pb0.97La0.02(Zr0.95Ti0.05)O3反铁电厚膜材料,研究了单步和多步退火工艺对反铁电厚膜结构及电学性能的影响。结果表明:与传统的单步退火方式相比,多步退火工艺制备的反铁电厚膜材料晶粒尺寸较大,结构致密性好,室温下反铁电态更稳定,具有良好的择优取向度(100)、较高的介电常数(达529)和饱和极化强度(达42μC/cm2)。其反铁电-铁电和铁电-反铁电的相变电场强度分别为198和89 kV/cm,反铁电-铁电相变电流密度达2×10-5 A/cm2,多次退火工艺可提高反铁电厚膜的成膜质量。

Effects of Multi-Step Anneal on (Pb,La) (Zr,Ti)O3 Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by the sol-gel method.The effects of single-step and multi-step annealing procedures on the structure and electrical properties of antiferroelectric thick films were stu-died.The analysis result indicates that compared to those prepared with the conventional single-step annealing process,the antiferroelectric thick films prepared by the multi-step annealing treatment show bigger grain size,better crack-free structure,more stable antiferroelectricity at room temperature,better(100)-preferred orientation,higher dielectric constant(up to 529) and saturation polarization(up to 42 μC/cm2).The electric fields of their antiferroelectric-ferroelectric(AFE-FE) and FE-AFE phase transitions are 198 and 89 kV/cm,respectively.The current density of AFE-FE phase transition can reach 2×10-5 A/cm2.These results indicate that the antiferroelectric thick film quality is improved with the multi-step annealing treatment.