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基于ZnSe/Ag/ZnSe可见区透明导电薄膜
引用本文:宋春燕,刘星元. 基于ZnSe/Ag/ZnSe可见区透明导电薄膜[J]. 光子学报, 2014, 40(6): 857-859. DOI: 10.3788/gzxb20114006.0857
作者姓名:宋春燕  刘星元
作者单位:(1 中国科学院长春光学精密机械与物理研究所 激发态物理重点实验室,长春 130033)
(2 中国科学院研究生院,北京 100049)
基金项目:中国科学院知识创新工程项目(No.20060615A)和吉林省科技发展计划项目(No.20090346,No.20100570)资助
摘    要:利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm-3,电子迁移率和电阻率分别为17.22 cm2 V-1 s-1和2.867×10-5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.

关 键 词:透明导电薄膜  ZnSe  Ag  功函数
收稿时间:2010-09-26

Transparent Conducting Film in Visible Region Based on ZnSe/Ag/ZnSe
SONG Chun-yan,LIU Xing-yuan. Transparent Conducting Film in Visible Region Based on ZnSe/Ag/ZnSe[J]. Acta Photonica Sinica, 2014, 40(6): 857-859. DOI: 10.3788/gzxb20114006.0857
Authors:SONG Chun-yan  LIU Xing-yuan
Affiliation:(1 Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,
Chinese Academy of Sciences,Changchun 130033,China)
(2 Graduate Uniersity of Chinese Academy of Sciences,Beijing 100049,China)
Abstract:Under room temperature,ZnSe/Ag/ZnSe transparent conducting film was fabricated by electron beam evaporation based on infrared material ZnSe and metal Ag.The ZnSe/Ag/ZnSe film has the electron density of 1.208×1020 cm-3,the electron mobility of 17.22 cm2V-1s-1,the resistivity of 2.867×10-5  Ω·cm,and the work function is 5.13 eV.The ZnSe/Ag/ZnSe film shows an average visible transmittance of more than 80% by theoretical modeling and 63.8% by measurement.The maximum measured transmittance of 83% can be obtained.The results indicates that ZnSe/Ag/ZnSe film has good optical and electrical properties that can be used as transparent electrode in optoelectronic devices.
Keywords:Transparent conducting film  ZnSe  Ag  Work function
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