60Co辐照损伤对发光二极管性能影响的研究

通过引入散射理论建立了发光二极管模型,并考虑低计量率电离辐照损伤影响,建立了器件材料散射因子与辐照损伤的关系模型.在输入电流宽范围变化的条件下,测量了器件在不同辐照条件下的电学特性,实验结果与理论模型符合良好.通过对测量结果和以上模型的分析,深入研究低剂量电离辐照损伤和发光二极管性能衰减的关系.证实由于复合中心上的电子浓度增加,导致界面态浓度和散射几率的略微增大,从而造成其I-V和L-V特性的略微衰减.同时由于重离子辐照可直接产生位移效应,使界面态浓度明显上升,因此其对发光二极管的影响较电离辐照大很多.

Influence of 60Co Radiation Damage on Performance of |Light Emitting Diode

The Light Emitting Diode model is presented based on the scattering theory.Taking the influence of low dose ionization radiation damage into consideration,the model of the relationship between device scattering factors and radiation damage is introduced.Over a wide range of input current,the electrical characteristics of devices are meassured for different ionization radiation situations.The experimental results agree well with the proposed models.After the analysis of the experimental results and the above-mentioned models,the relationship between low dose ionization radiation damage and Light Emitting Diode performance degradation is studied.It is proved that with increasing electron density in recombination center,the interface trap density and scattering probability increase slightly,which leads to slight degradation of I-V and L-V characteristics in Light Emitting Diode .Because heavy particle radiation can cause displacement effect directly,which leads to significant increase of interface trap density,heavy particle radiation has much more influence on the performance of Light Emitting Diode than ionization radiation.